EPIGAP offers APD's having an internal gain mechanism, fast time response, low dark current and high sensitivity in the near infrared region. These APD's are recommended for applications that require high bandwidth, or where internal gain is needed to overcome high pre-amp noise. In addition they provide higher sensitivity than a standard photodiode and are ideal for extreme low-level light detection and short pulse detection.
Silicon Avalanche photodiodes (Si APD's) are the preferred optical detectors for applications where the wavelength lies between 400 nm and 1100 nm. Standard versions are available in active area sizes Ø 200 and 500 µm and are offered in hermetic TO Cans and LCC packages.
These detectors have become the semiconductor equivalent of photomultipliers in many applications including data communication, LIDAR, instrumentation and photon counting.
|EOAPD-800-0-04||800 nm||Ø 230 µm||TO-46 Metal Can|
|EOAPD-800-0-08||800 nm||Ø 500 µm||TO-46 Metal Can|
|EOAPD-800-1-01||800 nm||Ø 230 µm||LCC3 SMD|
|EOAPD-800-1-05||800 nm||Ø 500 µm||LCC3 SMD|
|EOAPD-800-1-07||800 nm||Ø 500 µm||LCC6 SMD|
|EOAPD-905-0-12||905 nm||Ø 230 µm||TO-46 Metal Can|
|EOAPD-905-0-16||905 nm||Ø 500 µm||TO-46 Metal Can|
|EOAPD-905-1-09||905 nm||Ø 230 µm||LCC3 SMD|
|EOAPD-905-1-13||905 nm||Ø 500 µm||LCC3 SMD|
|EOAPD-905-1-15||905 nm||Ø 500 µm||LCC6 SMD|